By Mircea Dragoman, Daniela Dragoman
This booklet is devoted to the recent two-dimensional one-atomic-layer-thick fabrics corresponding to graphene, steel chalcogenides, silicene and different second fabrics. The ebook describes their major actual houses and functions in nanoelctronics, photonics, sensing and computing. a wide a part of the booklet offers with graphene and its extraordinary actual homes. one other vital a part of the ebook bargains with semiconductor monolayers comparable to MoS2 with awesome functions in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with extraordinary functions in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron gasoline units finish the therapy. The physics of 2DEG is defined intimately and the purposes in THz and IR sector are discussed.
Both authors are operating at the moment on those 2nd fabrics constructing idea and applications.
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Additional info for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials
In graphene MOSFETs with long gate lengths (L > 200 nm) modeled as above, fT shows a 1=L dependence and increases as the mobility increases. If the gate length is less than 100 nm, the cutoff frequencies of graphene FETs are very high, around 500–600 GHz, and compete with the fastest transistors ever known, such as InP HEMTs or GaAs mHEMTs. However, fmax of graphene MOSFETs is much lower (tens of GHz) than in InP HEMTs (hundreds of GHz). The degradation of CGS-back CGS-top Vch VGS-top Cq Cq Top gate V(x) Back gate Fig.
The fabrication of the diodes involved the following steps: (i) e-beam lithography patterning of the regions without graphene monolayers, (ii) PMMA deposition, (iii) patterning of the graphene shapes with an e-beam, (iv) RIE equipment to cut the graphene in trapezoidal (a) Diode neck 28 nm (b) Fig. 60 a SEM of the diode and b the graphene wafer with geometric diodes (from Dragoman et al. 2 Nanoelectronics on 2D Carbon-Based Materials 51 shapes, (v) PMMA coating and e-beam lithography of metallic contacts via an e-gun evaporation chamber.
Flexible integrated circuits on a PET substrate, such as a low-noise ampliﬁer or a mixer, were obtained recently at an extrinsic cutoff frequency of 32 GHz and fmax = 20 GHz (Yeh et al. 2014). In this case, the flexible self-aligned graphene FET is based on a core-shell Al/AlOx T-shape top gate (see Fig. 41). 5%. 2 Nanoelectronics on 2D Carbon-Based Materials Fig. 41 T-shaped gate self-aligned graphene FET on PET substrate 37 AlOx Graphene G D S PET Cr/Au Al2O3 Graphene Edge barrier Silicate Channel SiC Fig.
2D Nanoelectronics: Physics and Devices of Atomically Thin Materials by Mircea Dragoman, Daniela Dragoman