By Mircea Dragoman, Daniela Dragoman

ISBN-10: 3319484354

ISBN-13: 9783319484358

ISBN-10: 3319484370

ISBN-13: 9783319484372

This booklet is devoted to the recent two-dimensional one-atomic-layer-thick fabrics corresponding to graphene, steel chalcogenides, silicene and different second fabrics. The ebook describes their major actual houses and functions in nanoelctronics, photonics, sensing and computing. a wide a part of the booklet offers with graphene and its extraordinary actual homes. one other vital a part of the ebook bargains with semiconductor monolayers comparable to MoS2 with awesome functions in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with extraordinary functions in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron gasoline units finish the therapy. The physics of 2DEG is defined intimately and the purposes in THz and IR sector are discussed.
Both authors are operating at the moment on those 2nd fabrics constructing idea and applications.

Show description

Read or Download 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials PDF

Best semiconductors books

Diode Laser Materials and Devices: A Worldwide Market and by R. Szweda PDF

This file examines the advance of the diode laser over a six-year interval, 2000 to 2005, incorporating research of developments in markets, applied sciences and constitution. it really is designed to supply key info to clients and brands of substrates, epitaxial wafers (epiwafers) and units.

New PDF release: Nitride Semiconductor Devices

This can be the 1st booklet to be released on actual rules, mathematical versions, and sensible simulation of GaN-based units. Gallium nitride and its similar compounds let the fabrication of hugely effective light-emitting diodes and lasers for a extensive spectrum of wavelengths, starting from pink via yellow and eco-friendly to blue and ultraviolet.

A. G. Milnes D.Sc. (auth.)'s Semiconductor Devices and Integrated Electronics PDF

For a while there was a necessity for a semiconductor equipment booklet that contains diode and transistor concept past an introductory point and but has area to the touch on a much broader variety of semiconductor equipment rules and applica­ tions. Such themes are lined in really expert monographs numbering many hun­ dreds, however the voluminous nature of this literature limits entry for college students.

New PDF release: Wiley series in materials for electronic and optoelectronic

Just about all the semiconductors of sensible curiosity are the group-IV, III-V and II-VI semiconductors and the variety of technical functions of such semiconductors is very huge. the aim of this e-book is twofold: * to debate the major houses of the group-IV, III-V and II-VI semiconductors * to systemize those homes from a solid-state physics point nearly all of the textual content is dedicated to the outline of the lattice structural, thermal, elastic, lattice dynamic, digital energy-band structural, optical and provider delivery homes of those semiconductors.

Additional info for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials

Sample text

In graphene MOSFETs with long gate lengths (L > 200 nm) modeled as above, fT shows a 1=L dependence and increases as the mobility increases. If the gate length is less than 100 nm, the cutoff frequencies of graphene FETs are very high, around 500–600 GHz, and compete with the fastest transistors ever known, such as InP HEMTs or GaAs mHEMTs. However, fmax of graphene MOSFETs is much lower (tens of GHz) than in InP HEMTs (hundreds of GHz). The degradation of CGS-back CGS-top Vch VGS-top Cq Cq Top gate V(x) Back gate Fig.

The fabrication of the diodes involved the following steps: (i) e-beam lithography patterning of the regions without graphene monolayers, (ii) PMMA deposition, (iii) patterning of the graphene shapes with an e-beam, (iv) RIE equipment to cut the graphene in trapezoidal (a) Diode neck 28 nm (b) Fig. 60 a SEM of the diode and b the graphene wafer with geometric diodes (from Dragoman et al. 2 Nanoelectronics on 2D Carbon-Based Materials 51 shapes, (v) PMMA coating and e-beam lithography of metallic contacts via an e-gun evaporation chamber.

Flexible integrated circuits on a PET substrate, such as a low-noise amplifier or a mixer, were obtained recently at an extrinsic cutoff frequency of 32 GHz and fmax = 20 GHz (Yeh et al. 2014). In this case, the flexible self-aligned graphene FET is based on a core-shell Al/AlOx T-shape top gate (see Fig. 41). 5%. 2 Nanoelectronics on 2D Carbon-Based Materials Fig. 41 T-shaped gate self-aligned graphene FET on PET substrate 37 AlOx Graphene G D S PET Cr/Au Al2O3 Graphene Edge barrier Silicate Channel SiC Fig.

Download PDF sample

2D Nanoelectronics: Physics and Devices of Atomically Thin Materials by Mircea Dragoman, Daniela Dragoman


by Charles
4.3

Rated 4.19 of 5 – based on 48 votes